• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a sensor element (1) having a substrate (2) which has a strain-sensitive element (3) which is preferably applied by thin-film technology and which serves to measure the deformation of the substrate (2) when pressure is applied or the force is applied. According to the invention, the strain-sensitive element of XAlOyN1-y, wherein X is a metal having a high melting temperature in the range greater than 1400 ° C and 0 <y <0.4. On the strain-sensitive element (3), a passivation layer (5) may be applied.
    公开号:AT515945A4
    申请号:T50612/2014
    申请日:2014-09-05
    公开日:2016-01-15
    发明作者:Dietmar Dr Kröger；Peter Dipl Ing Schmid；Ulrich Dr Schmid；Alexander Dr Schricker；Christof Zarfl
    申请人:Piezocryst Advanced Sensorics；
    IPC主号:
    专利说明:

    The invention relates to a sensor element comprising a substrate which has a strain-sensitive element which is preferably applied by means of thin-film technology and which serves to measure the deformation of the substrate upon pressurization or force introduction.
    In order to measure, for example, static pressures, common, mostly membrane-based sensor concepts use piezoresistive methods or so-called strain gauges (DMS) in order to be able to detect local mechanical strains with high precision. However, for high temperature applications (up to 700 ° C), common DMS materials (such as CrNi) are not applicable because they irreversibly alter their electro-mechanical properties after high temperature loading or show a strong tendency to oxidize. High melting point metallic materials, e.g. Pt. (See "A Robust Pressure Sensor for Harsh Environmental Applications", S.Fricke, A. Friedberger, H. Seidel, U. Schmid, Sensors and Actuators A: Physical, Volume 184, September 2012, pages 16-21), can in principle be used up to the temperature range given in the given, but have a very high temperature coefficient of electrical resistance (TCR), which requires a very precise temperature measurement at the sensor element, which is technically hardly feasible over the entire temperature range.
    The aim is thus the development of thin-film systems with high temperature stability, a TCR near zero and the highest possible K-factor, which is a measure of the change in the electrical resistance during mechanical strain.
    Ni: a-C: H thin films meet the latter two requirements, but are only stable up to about 300 ° C. Such layers are described, for example, in &quot; Pressure sensitivity of piezoresistive nickel-carbon Ni: aC: H thin films &quot;, SteffenUhlig, Hanna Schmid-Engel, Tobias Speicher, Günter Schultes, Sensors and Actuators A: Physical, Volume 193, 15 April 2013, Pages 129 -135, described.
    From EP 1 9918 49 B1, a high-temperature pressure sensor element for measuring pressures even above 400 ° C. has become known in this connection. The high-temperature pressure sensor element or the pressure sensor consists of a substrate in which an interior space is configured. Furthermore, a deformable membrane is provided, which in use separates the interior space from the exterior space and deforms in the event of a change in the external pressure relative to the pressure in the interior space. On the deformable membrane is arranged a structure of strain gauges forming a strain gauge for measuring the deformation of the membrane. In this case, the membrane, the substrate and the strain gauge are formed from one and the same high temperature stable material, preferably an alloy such as a nickel base alloy. Between the strain gauge and the diaphragm is disposed an electrical insulation layer consisting of BN, MgO or Al 2 O 3. Furthermore, the strain gauge element may have a passivation layer consisting of the material of the insulation layer. The disadvantage is that said metallic alloys have a relatively high TCR value.
    From "Strain sensitive Pt-SiO 2 nanocermet thin films for high temperature pressureand force sensors", H. Schmid-Engel, S. Uhlig, U. Werner, G. Schultes, Sensors and Actuators A: Physical, Volume 206, 1 February 2014, pages 17-21, thin-film high-temperature strain gages, for example made of Pt-SiO 2, are known which have a high K factor and low temperature coefficient of resistance (TCR) and can be used in a temperature range up to 300 ° C.
    The object of the invention is to develop a sensor element with a substrate having the strain-sensitive element in such a way that a high temperature stability, a TCR close to zero and the highest possible K factor can also be realized in the high temperature range.
    This object is achieved according to the invention in that the strain-sensitive element consists of XAIOyNi-y, where X is a metal with a high melting temperature in the range greater than 1400 ° C and 0 &lt; y &lt; 0.4 applies.
    Preferably, the strain-sensitive element consists of a composite layer applied to the substrate by the PVD method (for example sputtering or vapor deposition method) or CVD method, the strain-sensitive element containing at least one metal X selected from Ti, Ta and Pt.
    It is known that XAIOyNi_y layers have a high resistance to oxidation. It has now been shown that the electro-mechanical characteristics (K-
    Factor, TCR) for use as a strain gage. With the help of the additional oxygen content, a further degree of freedom is created in order to be able to set the electro-mechanical parameters in a targeted manner.
    According to the invention, the proportion of aluminum in the strain-sensitive element, which makes a dielectric connection with nitrogen and oxygen, to the proportion of the metallic component is weighted such that the TCR of the strain-sensitive element assumes minimum values, preferably approximately zero.
    Thus, in addition to the aluminum content, a metallic component is added during layering. The composite layer is preferably deposited by a thin-film sputtering technique whereby the combination of metallic portion (with TCR> 0) and dielectric matrix (with TCR <0) in one layer makes it possible to set the TCR to approximately zero and, in addition, to provide a high Factor (> 2). For use as a sensor for a prolonged period of time under extreme temperature loads, it is desirable to place a thin film in a defined atmosphere which ensures that at high temperatures, there are no conversion processes in the film.
    The strain-sensitive element is thus preferably arranged in a closed sensor atmosphere with a defined oxygen content, preferably in a sealed sensor housing. By introducing the XAlOyN ^ y thin film into a closed sensor atmosphere, the environment of which is dominated by, for example, a nickel base material (eg Haynes 230), the high temperature behavior of the film can be maintained at a very stable level. The nickel-based alloy binds at high temperature ends residual oxygen in the sensor atmosphere, whereby the sealed structure prevents the backflow of atmospheric oxygen. As a result, there is a defined oxygen content in the sensor atmosphere, the oxidation behavior of the thin film can be controlled by the ratio of the oxydischen and nitridischen shares. Thus, changes in the layer over a long period of time can be minimized.
    According to the invention, the strain-sensitive element may comprise a passivation layer, preferably of Al 2 O 3 or AlN. By applying a high-temperature-stable passivation, the long-term stability can be further increased.
    The invention will be explained in more detail below with reference to drawings. Show it:
    1 shows a sensor element according to the invention in a sectional view;
    FIG. 2 shows a top view of a sensor element according to the invention (without passivation layer); FIG.
    3 shows an embodiment variant of the sensor element according to the invention in the housing of a pressure sensor;
    4 shows a diagram of the K-factor for a strain-sensitive element of TiAlO.sub.2 N. 0.8 in the temperature range up to 350.degree. such as
    Fig. 5 is a TCR diagram for TiAIOo, 2N0,8 in the differential temperature range up to 350 ° C.
    FIGS. 1 and 2 show a sensor element 1 according to the invention with a substrate 2, which has a thin-film-applied, strain-sensitive element 3 which serves to measure the deformation of the substrate 2 upon application of pressure or introduction of force. The strain-sensitive element 3 consists of XAlOyN ^ y, where X is a metal having a high melting temperature, for example titanium. The factor y is in a range between 0 and 0.4. The strain-sensitive element 3 and the subsequent substrate region have a passivation layer 5, for example made of Al 2 O 3.
    In the plan view according to FIG. 2, the passivation layer has been omitted, so that the strain-sensitive element 3 becomes visible as a meandering strain gauge together with a connection contact.
    In the embodiment according to FIG. 3, the sensor element 1 according to the invention lies in a closed sensor atmosphere A with a defined sensor
    Oxygen content in a sealed sensor housing 4 of a pressure sensor 10vor. As the substrate 2, the membrane 11 of the pressure sensor 10 is used, on the inner side of which the strain-sensitive element 3 is applied as a thin layer. the housing 4bzw. the immediate environment for the strain sensitive element 3 is at least partially made of Ni base material. In the illustrated example, the diaphragm 11 and the pressure transmitting member 12 acting on the piezoelectric elements 13 may be made of Ni base material.
    In Figs. 4 and 5, for a strain-sensitive element made of TiAl0.21M0.8, the K-factor (gauge factor) and the TCR ((R-R0) / R0) are each in a differential temperature range between 0 and 350 ° C with respect to a reference temperature - shown, wherein the reference temperature here is the room temperature.
    权利要求:
    Claims (9)
    [1]
    PATENT CLAIMS 1. A sensor element (1) comprising a substrate (2) having a strain-sensitive element (3), preferably applied by thin-film technique, for measuring the deformation of the substrate (2) under pressure or application of force, characterized in that the strain-sensitive element (3 ) is made of XAIOyNi.y where X is a metal having a high melting temperature in the range greater than 1400 ° C and 0 &lt; y &lt; 0.4 applies.
    [2]
    Sensor element (1) according to claim 1, characterized in that the strain-sensitive element (3) consists of a composite layer which can be applied to the substrate (2) in the PVD method, preferably sputtering or vapor deposition method or by CVD method ,
    [3]
    3. Sensor element (1) according to claim 1 or 2, characterized in that the strain-sensitive element (3) comprises at least one metal X from the group Ti, Ta and Pt.
    [4]
    A sensor element (1) according to any one of claims 1 to 3, characterized in that the proportion of aluminum in the strain-sensitive element (3), which enters into a dielectric compound with nitrogen and oxygen to the proportion of the metallic component, is weighted as the TCR of the strain-sensitive element (3) assumes minimum values, preferably approaching 0.
    [5]
    Sensor element (1) according to claim 4, characterized in that the titanium content in a strain-sensitive element (3) of TiAION is between 0.4 and 0.5% by weight.
    [6]
    6. Sensor element (1) according to one of claims 1 to 5, characterized in that the strain-sensitive element (3) is arranged in a closed sensor atmosphere with a defined oxygen content, preferably in a sealed sensor housing (4).
    [7]
    7. Sensor element (1) according to claim 6, characterized in that the sensor housing (4) consists at least partially of Ni-base material
    [8]
    A sensor element (1) according to any one of claims 1 to 7, characterized in that the substrate (2) to which the strain-sensitive element (3) is applied consists of Ni base material, for example Haynes230, made of ceramic or a piezoelectric material.
    [9]
    Sensor element (1) according to one of Claims 1 to 8, characterized in that the strain-sensitive element (3) has a passivation layer (5), preferably of Al 2 O 3 or AlN.
    类似技术:
    公开号 | 公开日 | 专利标题
    EP2993453B1|2017-02-22|Sensor element
    EP3327415B1|2019-04-10|Resistance thermometer
    EP1991849B1|2012-11-21|High temperature pressure sensor element, particularly for measuring pressures inside jet engines, method for the production thereof and component for jet engines
    DE1648764B2|1972-01-27|CAPACITIVE PRESSURE TRANSDUCER
    DE102009044980A1|2011-03-31|Method for producing a sensor component without passivation and sensor component
    EP3134374A1|2017-03-01|Pressure sensor with a ceramic base body
    DE69819193T2|2004-07-29|ELASTIC STRIP AND ITS APPLICATIONS
    WO2014053350A2|2014-04-10|Pressure sensor comprising a cover layer
    DE102005060106B4|2016-03-03|Precision force transducer with strain gauges
    EP0096156B1|1988-01-07|Process for the quasi-hermetic, almost reactionless covering of sensitive physical structures, especially strain gauges
    DE60025355T2|2006-08-17|STRAIN GAUGES
    DE102006023724B4|2008-08-07|Measuring cell arrangement for a pressure sensor with force measuring element made of glass
    DE102016111729A1|2017-12-28|load cell
    DE102011109461A1|2013-02-07|Pressure and temperature measuring device
    DE102015108950A1|2016-12-08|Pressure sensor with active brazing
    DE102011106694A1|2013-01-10|Pressure Transmitter
    DE102014103142A1|2015-09-10|pressure transducers
    DE102012219203B3|2013-11-14|Device for force- or displacement measurement, has two meander arrangements connected to each other by coupling piece to form parallel spring arrangement, where each meander arrangement has neutral silicon springs and active silicon springs
    DE102013113171A1|2015-05-28|Piezoresistive silicon differential pressure cell and method for its production
    EP3613065B1|2021-06-02|Film resistor and thin-film sensor
    DE102008064163A1|2010-07-01|Weighing cell, has temperature compensating device including digital temperature sensor arranged on bending bar and connected with digital evaluation device via separate line, where bending bar is connected with substrate
    DE102013007644A1|2014-11-06|Temperature-resistant piezoresistive resistance layer and method for its production
    DE212018000137U1|2019-10-23|Piezoresistive pressure sensor
    WO2018234233A1|2018-12-27|Film resistor and thin-film sensor
    DE1648764C|1972-09-07|Capacitive pressure transducer
    同族专利:
    公开号 | 公开日
    AT515945B1|2016-01-15|
    EP2993453B1|2017-02-22|
    US20160069758A1|2016-03-10|
    US9618406B2|2017-04-11|
    EP2993453A1|2016-03-09|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    DE4328791A1|1993-08-26|1995-03-02|Siemens Matsushita Components|Hybrid thermistor temperature sensor|
    DE60029068T2|1999-10-12|2006-12-28|Hewlett-Packard Development Company, L.P., Houston|Ink jet head device with interference detector|
    US20020160565A1|2001-04-30|2002-10-31|Lee Kee Jeung|Capacitor for semiconductor devices and a method of fabricating such capacitors|
    US20030124748A1|2001-12-31|2003-07-03|Summerfelt Scott R.|Method of forming an FeRAM having a multi-layer hard mask and patterning thereof|
    DE102006056172A1|2006-11-27|2008-05-29|Endress + Hauser Gmbh + Co. Kg|Elastic ceramic body and pressure sensor with a resilient ceramic body|
    EP2075563A2|2007-12-31|2009-07-01|Rosemount Aerospace Inc.|High temperature capacitive static/dynamic pressure sensors|
    US20100000326A1|2007-12-31|2010-01-07|Shuwen Guo|High temperature capacitive static/dynamic pressure sensors|
    US20090243123A1|2008-04-01|2009-10-01|Texas Instruments Incorporated|Increasing Exposure Tool Alignment Signal Strength for a Ferroelectric Capacitor Layer|
    US6729187B1|1999-04-29|2004-05-04|The Board Of Governors For Higher Education, State Of Rhode Island And Providence Plantations|Self-compensated ceramic strain gage for use at high temperatures|
    JP2003109773A|2001-07-27|2003-04-11|Semiconductor Energy Lab Co Ltd|Light-emitting device, semiconductor device and its manufacturing method|
    JP2004301911A|2003-03-28|2004-10-28|Fujitsu Ltd|Optical waveguide, method of manufacturing the same and optical waveguide device|
    US8026788B2|2005-12-09|2011-09-27|Fraunhofer—Gesellschaft zur Foerderung der angewandten Forschung e.V.|Thin-film resistor with a layer structure and method for manufacturing a thin-film resistor with a layer structure|
    DE102006010804A1|2006-03-07|2007-09-20|Eads Deutschland Gmbh|High-temperature pressure sensor element, in particular for measuring pressures within engines, method for its production and component for engines|
    WO2007127170A2|2006-04-25|2007-11-08|Rosemount Inc.|Pressure sensor using near net shape sintered ceramics|
    US8191426B2|2007-06-05|2012-06-05|Board Of Governors For Higher Education, State Of Rhode Island And Providence Plantations|Low TCR nanocomposite strain gages|
    SG160302A1|2008-09-29|2010-04-29|Semiconductor Energy Lab|Method for manufacturing semiconductor substrate|
    JP2010123338A|2008-11-18|2010-06-03|Canon Inc|Image display apparatus|
    US8297837B1|2010-04-01|2012-10-30|Angelo Gaitas|Metal and semimetal sensors near the metal insulator transition regime|
    US8441335B2|2010-10-21|2013-05-14|Analog Devices, Inc.|Method of trimming a thin film resistor, and an integrated circuit including trimmable thin film resistors|
    US8356514B2|2011-01-13|2013-01-22|Honeywell International Inc.|Sensor with improved thermal stability|FR3041431B1|2015-09-17|2019-04-05|Safran Electronics & Defense|PRESSURE SENSOR, MEASURING DEVICE AND SYSTEM FOR MEASURING PRESSURE COMPRISING SUCH A SENSOR|
    DE102017108582A1|2017-04-21|2018-10-25|Epcos Ag|Sheet resistance and thin film sensor|
    DE102017126121A1|2017-11-08|2019-05-09|Tdk Electronics Ag|Pressure sensor system with protection against freezing medium|
    AT520304B1|2018-03-21|2019-03-15|Piezocryst Advanced Sensorics|PRESSURE SENSOR|
    法律状态:
    2020-08-15| MM01| Lapse because of not paying annual fees|Effective date: 20190905 |
    优先权:
    申请号 | 申请日 | 专利标题
    ATA50612/2014A|AT515945B1|2014-09-05|2014-09-05|SENSOR ELEMENT|ATA50612/2014A| AT515945B1|2014-09-05|2014-09-05|SENSOR ELEMENT|
    EP15181394.6A| EP2993453B1|2014-09-05|2015-08-18|Sensor element|
    US14/842,193| US9618406B2|2014-09-05|2015-09-01|Sensor element|
    [返回顶部]